Process and performance improvements to type-II GaAsSb/InP DHBTs

Benjamin F. Chu-Kung, Shyh Chiang Shen, Walid Hafez, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsSb/InP type-II transistors have been fabricated with fT > 325 GHz and fMAX> 275 GHz. This work will examine the layer structure design criteria allowing the fT to improve from 244 GHz to 358 GHz and the effects this has on the corresponding fMAX. Additionally, the process improvements to control the undercut into the active region during the base contact isolation etch will be discussed. These modifications improved fMAXfrom 225 GHz to 279 GHz.

Original languageEnglish (US)
Title of host publication2005 International Conference on Compound Semiconductor Manufacturing Technology
StatePublished - Dec 1 2005
Event2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States
Duration: Apr 11 2005Apr 14 2005

Publication series

Name2005 International Conference on Compound Semiconductor Manufacturing Technology

Other

Other2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
CountryUnited States
CityNew Orleans, LA
Period4/11/054/14/05

Keywords

  • DHBT
  • GaAsSb
  • HBT
  • InP

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Chu-Kung, B. F., Shen, S. C., Hafez, W., & Feng, M. (2005). Process and performance improvements to type-II GaAsSb/InP DHBTs. In 2005 International Conference on Compound Semiconductor Manufacturing Technology (2005 International Conference on Compound Semiconductor Manufacturing Technology).