Process and performance improvements to type-II GaAsSb/InP DHBTs

Benjamin F. Chu-Kung; Shyh Chiang Shen; Walid Hafez; Milton Feng

Process and performance improvements to type-II GaAsSb/InP DHBTs

Benjamin F. Chu-Kung, Shyh Chiang Shen, Walid Hafez, Milton Feng

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAsSb/InP type-II transistors have been fabricated with f_T > 325 GHz and f_MAX> 275 GHz. This work will examine the layer structure design criteria allowing the f_T to improve from 244 GHz to 358 GHz and the effects this has on the corresponding f_MAX. Additionally, the process improvements to control the undercut into the active region during the base contact isolation etch will be discussed. These modifications improved f_MAXfrom 225 GHz to 279 GHz.

Original language	English (US)
Title of host publication	2005 International Conference on Compound Semiconductor Manufacturing Technology
State	Published - 2005
Event	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States Duration: Apr 11 2005 → Apr 14 2005

Publication series

Name	2005 International Conference on Compound Semiconductor Manufacturing Technology

Other

Other	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Country/Territory	United States
City	New Orleans, LA
Period	4/11/05 → 4/14/05

Keywords

DHBT
GaAsSb
HBT
InP

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Process and performance improvements to type-II GaAsSb/InP DHBTs. / Chu-Kung, Benjamin F.; Shen, Shyh Chiang; Hafez, Walid et al.
2005 International Conference on Compound Semiconductor Manufacturing Technology. 2005. (2005 International Conference on Compound Semiconductor Manufacturing Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chu-Kung, BF, Shen, SC, Hafez, W & Feng, M 2005, Process and performance improvements to type-II GaAsSb/InP DHBTs. in 2005 International Conference on Compound Semiconductor Manufacturing Technology. 2005 International Conference on Compound Semiconductor Manufacturing Technology, 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005, New Orleans, LA, United States, 4/11/05.

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abstract = "GaAsSb/InP type-II transistors have been fabricated with fT > 325 GHz and fMAX> 275 GHz. This work will examine the layer structure design criteria allowing the fT to improve from 244 GHz to 358 GHz and the effects this has on the corresponding fMAX. Additionally, the process improvements to control the undercut into the active region during the base contact isolation etch will be discussed. These modifications improved fMAXfrom 225 GHz to 279 GHz.",

keywords = "DHBT, GaAsSb, HBT, InP",

author = "Chu-Kung, {Benjamin F.} and Shen, {Shyh Chiang} and Walid Hafez and Milton Feng",

year = "2005",

language = "English (US)",

isbn = "1893580067",

series = "2005 International Conference on Compound Semiconductor Manufacturing Technology",

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note = "2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 ; Conference date: 11-04-2005 Through 14-04-2005",

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AU - Chu-Kung, Benjamin F.

AU - Shen, Shyh Chiang

AU - Hafez, Walid

AU - Feng, Milton

PY - 2005

Y1 - 2005

N2 - GaAsSb/InP type-II transistors have been fabricated with fT > 325 GHz and fMAX> 275 GHz. This work will examine the layer structure design criteria allowing the fT to improve from 244 GHz to 358 GHz and the effects this has on the corresponding fMAX. Additionally, the process improvements to control the undercut into the active region during the base contact isolation etch will be discussed. These modifications improved fMAXfrom 225 GHz to 279 GHz.

AB - GaAsSb/InP type-II transistors have been fabricated with fT > 325 GHz and fMAX> 275 GHz. This work will examine the layer structure design criteria allowing the fT to improve from 244 GHz to 358 GHz and the effects this has on the corresponding fMAX. Additionally, the process improvements to control the undercut into the active region during the base contact isolation etch will be discussed. These modifications improved fMAXfrom 225 GHz to 279 GHz.

KW - DHBT

KW - GaAsSb

KW - HBT

KW - InP

UR - http://www.scopus.com/inward/record.url?scp=84887360504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887360504&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887360504

SN - 1893580067

SN - 9781893580060

T3 - 2005 International Conference on Compound Semiconductor Manufacturing Technology

BT - 2005 International Conference on Compound Semiconductor Manufacturing Technology

T2 - 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005

Y2 - 11 April 2005 through 14 April 2005

ER -

Process and performance improvements to type-II GaAsSb/InP DHBTs

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Library availability

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