Because of the rapid advances in and technical importance of SiC and III-V nitride materials and devices, these topics represented the largest component of the 37th Electronic Materials Conference (EMC) held in 1995 at the University of Virginia. There were 22 presentations on III-V nitrides and 10 presentations on SiC. A few of those presentations have been developed into papers that are contained in this special issue along with other contributions from these fields for a total of 23 papers. These papers cover the topics of epitaxy, characterization, processing, and device applications. SiC and III-V nitrides will again be a major emphasis at the 38th EMC, June 26-28, 1996, at the University of California, Santa Barbara. We would like to thank the authors, reviewers, and the Journal of Electronic Materials for their efforts, which resulted in this special issue.