Abstract
This paper deviates from strictly empirical chip reliability approaches and uses instead a chip reliability methodology based on probabilistic-physics-of-failure (PPoF) principles. We derive the failure-time distribution of both deep-submicron transistors and optical interconnects owing to the presence of a common defect activation energy distribution. We show how short-time device degradation can be used to extract the tails of the semi-symmetric failure-time distribution (important for long-term reliability qualification). Applying novel reliability qualification rules based on this failure-time distribution, `latent failures' can then be avoided through design changes for reliability.
Original language | English (US) |
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Pages | 179-182 |
Number of pages | 4 |
State | Published - 2000 |
Event | 2000 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA Duration: Oct 23 2000 → Oct 26 2000 |
Other
Other | 2000 IEEE International Integrated Reliability Workshop |
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City | Lake Tahoe, CA, USA |
Period | 10/23/00 → 10/26/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering