We use high pressure to reveal the dependence of interfacial heat transport on the stiffness of interfacial bonds. The combination of time-domain thermoreflectance and SiC anvil techniques is used to measure the pressure-dependent thermal conductance G(P) of clean and modified Al/SiC interfaces at pressures as high as P = 12 GPa. We create low-stiffness, van der Waals-bonded interfaces by transferring a monolayer of graphene onto the SiC surface before depositing the Al film. For such weak interfaces, G(P) initially increases approximately linearly with P. At high pressures, P > 8 GPa, the thermal conductance of these weak interfaces approaches the high values characteristic of strongly bonded, clean interfaces.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 16 2011|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics