Pressure tuning of the thermal conductance of weak interfaces

Wen Pin Hsieh, Austin S. Lyons, Eric Pop, Pawel Keblinski, David G. Cahill

Research output: Contribution to journalArticlepeer-review


We use high pressure to reveal the dependence of interfacial heat transport on the stiffness of interfacial bonds. The combination of time-domain thermoreflectance and SiC anvil techniques is used to measure the pressure-dependent thermal conductance G(P) of clean and modified Al/SiC interfaces at pressures as high as P = 12 GPa. We create low-stiffness, van der Waals-bonded interfaces by transferring a monolayer of graphene onto the SiC surface before depositing the Al film. For such weak interfaces, G(P) initially increases approximately linearly with P. At high pressures, P > 8 GPa, the thermal conductance of these weak interfaces approaches the high values characteristic of strongly bonded, clean interfaces.

Original languageEnglish (US)
Article number184107
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number18
StatePublished - Nov 16 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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