Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption

Justin C. Koepke, Joshua D. Wood, Cedric M. Horvath, Joseph W. Lyding, Salvador Barraza-Lopez

Research output: Contribution to journalArticle

Abstract

We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)-7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.

Original languageEnglish (US)
Article number071603
JournalApplied Physics Letters
Volume107
Issue number7
DOIs
StatePublished - Aug 17 2015

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preserving
graphene
adsorption
flakes
ultrahigh vacuum
passivity
scanning tunneling microscopy
chemistry
scanning
silicon
room temperature
configurations
atoms
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption. / Koepke, Justin C.; Wood, Joshua D.; Horvath, Cedric M.; Lyding, Joseph W.; Barraza-Lopez, Salvador.

In: Applied Physics Letters, Vol. 107, No. 7, 071603, 17.08.2015.

Research output: Contribution to journalArticle

Koepke, Justin C. ; Wood, Joshua D. ; Horvath, Cedric M. ; Lyding, Joseph W. ; Barraza-Lopez, Salvador. / Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption. In: Applied Physics Letters. 2015 ; Vol. 107, No. 7.
@article{f2785242ff3240f4ad2d60ef5888fb65,
title = "Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption",
abstract = "We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)-7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.",
author = "Koepke, {Justin C.} and Wood, {Joshua D.} and Horvath, {Cedric M.} and Lyding, {Joseph W.} and Salvador Barraza-Lopez",
year = "2015",
month = "8",
day = "17",
doi = "10.1063/1.4928930",
language = "English (US)",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption

AU - Koepke, Justin C.

AU - Wood, Joshua D.

AU - Horvath, Cedric M.

AU - Lyding, Joseph W.

AU - Barraza-Lopez, Salvador

PY - 2015/8/17

Y1 - 2015/8/17

N2 - We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)-7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.

AB - We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)-7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=84939864383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939864383&partnerID=8YFLogxK

U2 - 10.1063/1.4928930

DO - 10.1063/1.4928930

M3 - Article

AN - SCOPUS:84939864383

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 071603

ER -