@inproceedings{bc8eeff21b9e4cfbb2027c9bb89bd25c,
title = "Present understanding of gate oxide wearout",
abstract = "Generation of neutral electron traps in the gate oxide leads to degradation in the form of stress-induced leakage current and eventually results in breakdown. We review proposed mechanisms for oxide trap generation and show that the anode hole injection model most likely describes the correct mechanism. Stress-induced leakage is shown to be the result of inelastic trapassisted tunneling of electrons that originate in the cathode conduction band. A framework for modeling time-to-breakdown is presented.",
author = "E. Rosenbaum and Jie Wu",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",
year = "2000",
doi = "10.1109/ESSDERC.2000.194717",
language = "English (US)",
isbn = "9782863322482",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "54--59",
editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",
booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",
}