Present understanding of gate oxide wearout

E. Rosenbaum, Jie Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Generation of neutral electron traps in the gate oxide leads to degradation in the form of stress-induced leakage current and eventually results in breakdown. We review proposed mechanisms for oxide trap generation and show that the anode hole injection model most likely describes the correct mechanism. Stress-induced leakage is shown to be the result of inelastic trapassisted tunneling of electrons that originate in the cathode conduction band. A framework for modeling time-to-breakdown is presented.

Original languageEnglish (US)
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society
Pages54-59
Number of pages6
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
StatePublished - Jan 1 2000
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: Sep 11 2000Sep 13 2000

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period9/11/009/13/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Present understanding of gate oxide wearout'. Together they form a unique fingerprint.

Cite this