Presence and spatial distribution of interfacial electronic states in LaMnO3 -SrMnO3 superlattices

A. B. Shah; Q. M. Ramasse; S. J. May; Jerald Kavich; J. G. Wen; X. Zhai; J. N. Eckstein; J. Freeland; A. Bhattacharya; J. M. Zuo

doi:10.1103/PhysRevB.82.115112

Presence and spatial distribution of interfacial electronic states in LaMnO₃ -SrMnO₃ superlattices

A. B. Shah, Q. M. Ramasse, S. J. May, Jerald Kavich, J. G. Wen, X. Zhai, J. N. Eckstein, J. Freeland, A. Bhattacharya, J. M. Zuo

Research output: Contribution to journal › Article › peer-review

Abstract

We report direct evidence of interfacial states at the onset of OK edge confined to a spatial distance of 1 unit-cell full-width at half maximum at the sharp interfaces between epitaxial films of LaMnO₃ and SrMnO ₃ from electron energy-loss spectroscopy (EELS) measurements. The interfacial states are sensitive to interface sharpness; at rough interfaces with interfacial steps of 1-2 unit cells in height, experimental data shows a reduction, or suppression, of the interfacial states. The EELS measurements were performed using a fine electron probe obtained by electron lens aberration correction. By scanning the electron probe across the interface, we are able to map the spatial distribution of the interfacial states across interfaces at high resolution.

Original language	English (US)
Article number	115112
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.82.115112
State	Published - Sep 13 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.82.115112

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Shah, A. B., Ramasse, Q. M., May, S. J., Kavich, J., Wen, J. G., Zhai, X., Eckstein, J. N., Freeland, J., Bhattacharya, A., & Zuo, J. M. (2010). Presence and spatial distribution of interfacial electronic states in LaMnO₃ -SrMnO₃ superlattices. Physical Review B - Condensed Matter and Materials Physics, 82(11), Article 115112. https://doi.org/10.1103/PhysRevB.82.115112

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abstract = "We report direct evidence of interfacial states at the onset of OK edge confined to a spatial distance of 1 unit-cell full-width at half maximum at the sharp interfaces between epitaxial films of LaMnO3 and SrMnO 3 from electron energy-loss spectroscopy (EELS) measurements. The interfacial states are sensitive to interface sharpness; at rough interfaces with interfacial steps of 1-2 unit cells in height, experimental data shows a reduction, or suppression, of the interfacial states. The EELS measurements were performed using a fine electron probe obtained by electron lens aberration correction. By scanning the electron probe across the interface, we are able to map the spatial distribution of the interfacial states across interfaces at high resolution.",

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T1 - Presence and spatial distribution of interfacial electronic states in LaMnO3 -SrMnO3 superlattices

AU - Shah, A. B.

AU - Ramasse, Q. M.

AU - May, S. J.

AU - Kavich, Jerald

AU - Wen, J. G.

AU - Zhai, X.

AU - Eckstein, J. N.

AU - Freeland, J.

AU - Bhattacharya, A.

AU - Zuo, J. M.

PY - 2010/9/13

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AB - We report direct evidence of interfacial states at the onset of OK edge confined to a spatial distance of 1 unit-cell full-width at half maximum at the sharp interfaces between epitaxial films of LaMnO3 and SrMnO 3 from electron energy-loss spectroscopy (EELS) measurements. The interfacial states are sensitive to interface sharpness; at rough interfaces with interfacial steps of 1-2 unit cells in height, experimental data shows a reduction, or suppression, of the interfacial states. The EELS measurements were performed using a fine electron probe obtained by electron lens aberration correction. By scanning the electron probe across the interface, we are able to map the spatial distribution of the interfacial states across interfaces at high resolution.

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