Preliminary evidence of field induced rhenium etching by Xe F2 at high vacuum

C. H. Castano Giraldo, M. Aghazarian, D. N. Ruzic

Research output: Contribution to journalArticlepeer-review

Abstract

Preliminary evidence of enhanced etching of rhenium by Xe F2 under the influence of an electric field (3.36 GVm) is presented. Scanning electron microscope photographs of sharp rhenium tips show etching of at least 0.40 μm ±0.07 in 32 min at the point of maximum electric field, indicating a field enhanced etching rate of 13 nmmin ±2. A control experiment shows a maximum spontaneous etching of rhenium by Xe F2 of 0.1 μm ±0.07 in 30 min, indicating a maximum possible spontaneous etching rate of rhenium by Xe F2 of 3 nmmin ±2. The spontaneous rate of tungsten by Xe F2 reported in the literature is 0.2 nmmin.

Original languageEnglish (US)
Article number044901
JournalJournal of Applied Physics
Volume103
Issue number4
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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