Preliminary evidence of enhanced etching of rhenium by Xe F2 under the influence of an electric field (3.36 GVm) is presented. Scanning electron microscope photographs of sharp rhenium tips show etching of at least 0.40 μm ±0.07 in 32 min at the point of maximum electric field, indicating a field enhanced etching rate of 13 nmmin ±2. A control experiment shows a maximum spontaneous etching of rhenium by Xe F2 of 0.1 μm ±0.07 in 30 min, indicating a maximum possible spontaneous etching rate of rhenium by Xe F2 of 3 nmmin ±2. The spontaneous rate of tungsten by Xe F2 reported in the literature is 0.2 nmmin.
ASJC Scopus subject areas
- Physics and Astronomy(all)