Predictive surface kinetic analysis: the case of TiSi2 CVD

M. A. Mendicino, R. P. Southwell, E. G. Seebauer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To study the kinetics of TiSi2 desposition, a new experimental approach combining analysis during growth and in ultrahigh vacuum has been used. The H2, HCl, SiCl2, and SiH3Cl were identified as volatile reaction products through the steady state growth experiments.

Original languageEnglish (US)
Title of host publicationGas-Phase and Surface Chemistry in Electronic Materials Processing
PublisherPubl by Materials Research Society
Pages63-68
Number of pages6
ISBN (Print)1558992332
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume334
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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