Predictive modeling of peak discharge current during charged device model test of microelectronic components

Vrashank Shukla, Gianluca Boselli, Mariano Dissegna, Charvaka Duvvury, Raj Sankaralingam, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a computationally efficient methodology to predict the peak CDM discharge current for a given pre-charge voltage. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
StatePublished - Oct 16 2013
Event2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States
Duration: Sep 8 2013Sep 13 2013

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
CountryUnited States
CityLas Vegas, NV
Period9/8/139/13/13

Fingerprint

Microelectronics
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R., & Rosenbaum, E. (2013). Predictive modeling of peak discharge current during charged device model test of microelectronic components. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013 [6635951] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Predictive modeling of peak discharge current during charged device model test of microelectronic components. / Shukla, Vrashank; Boselli, Gianluca; Dissegna, Mariano; Duvvury, Charvaka; Sankaralingam, Raj; Rosenbaum, Elyse.

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 2013. 6635951 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shukla, V, Boselli, G, Dissegna, M, Duvvury, C, Sankaralingam, R & Rosenbaum, E 2013, Predictive modeling of peak discharge current during charged device model test of microelectronic components. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013., 6635951, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013, Las Vegas, NV, United States, 9/8/13.
Shukla V, Boselli G, Dissegna M, Duvvury C, Sankaralingam R, Rosenbaum E. Predictive modeling of peak discharge current during charged device model test of microelectronic components. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 2013. 6635951. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).
Shukla, Vrashank ; Boselli, Gianluca ; Dissegna, Mariano ; Duvvury, Charvaka ; Sankaralingam, Raj ; Rosenbaum, Elyse. / Predictive modeling of peak discharge current during charged device model test of microelectronic components. Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 2013. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).
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