Predictive modeling of peak discharge current during charged device model test of microelectronic components

Vrashank Shukla, Gianluca Boselli, Mariano Dissegna, Charvaka Duvvury, Raj Sankaralingam, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a computationally efficient methodology to predict the peak CDM discharge current for a given pre-charge voltage. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
StatePublished - Oct 16 2013
Event2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States
Duration: Sep 8 2013Sep 13 2013

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
CountryUnited States
CityLas Vegas, NV
Period9/8/139/13/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Shukla, V., Boselli, G., Dissegna, M., Duvvury, C., Sankaralingam, R., & Rosenbaum, E. (2013). Predictive modeling of peak discharge current during charged device model test of microelectronic components. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013 [6635951] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).