Prediction of ESD protection levels and novel protection devices in thin film SOI technology

Prasun Raha, Jeremy C. Smith, James W. Miller, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

In this paper we investigate and develop models for Partially-Depleted SOI (PD-SOI) device failure under EOS/ESD stress. The model and experimental data show that due to increased device self-heating, the second-breakdown current per micron width (It2) for salicided PD-SOI MOSFETs with Si film thickness of 100 nm is about 50% of that in their bulk counterparts under HBM-ESD stress pulses. Furthermore, It2 did not scale with device width. Therefore, ESD protection devices with non-silicided S/D diffusions and source-body tied MOSFETs are investigated for improved ESD protection levels. Compact ESD protection networks using the source-body tied device have been shown to achieve HBM-ESD protection levels of ±3.75 kV.

Original languageEnglish (US)
Pages (from-to)356-365
Number of pages10
JournalElectrical Overstress/Electrostatic Discharge Symposium Proceedings
StatePublished - Dec 1 1997

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SOI (semiconductors)
thin films
predictions
field effect transistors
film thickness
breakdown
heating
pulses

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Prediction of ESD protection levels and novel protection devices in thin film SOI technology. / Raha, Prasun; Smith, Jeremy C.; Miller, James W.; Rosenbaum, Elyse.

In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 01.12.1997, p. 356-365.

Research output: Contribution to journalArticle

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