Prediction of charged device model peak discharge current for microelectronic components

Vrashank Shukla, Gianluca Boselli, Mariano Dissegna, Charvaka Duvvury, Raj Sankaralingam, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

Original languageEnglish (US)
Article number6862855
Pages (from-to)801-809
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume14
Issue number3
DOIs
StatePublished - Sep 1 2014

Fingerprint

Microelectronics
Electrostatic discharge

Keywords

  • CDM
  • ESD
  • peak current stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Prediction of charged device model peak discharge current for microelectronic components. / Shukla, Vrashank; Boselli, Gianluca; Dissegna, Mariano; Duvvury, Charvaka; Sankaralingam, Raj; Rosenbaum, Elyse.

In: IEEE Transactions on Device and Materials Reliability, Vol. 14, No. 3, 6862855, 01.09.2014, p. 801-809.

Research output: Contribution to journalArticle

Shukla, Vrashank ; Boselli, Gianluca ; Dissegna, Mariano ; Duvvury, Charvaka ; Sankaralingam, Raj ; Rosenbaum, Elyse. / Prediction of charged device model peak discharge current for microelectronic components. In: IEEE Transactions on Device and Materials Reliability. 2014 ; Vol. 14, No. 3. pp. 801-809.
@article{8dfa86b522434b7c9499095b3fd5773c,
title = "Prediction of charged device model peak discharge current for microelectronic components",
abstract = "This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.",
keywords = "CDM, ESD, peak current stress",
author = "Vrashank Shukla and Gianluca Boselli and Mariano Dissegna and Charvaka Duvvury and Raj Sankaralingam and Elyse Rosenbaum",
year = "2014",
month = "9",
day = "1",
doi = "10.1109/TDMR.2014.2342241",
language = "English (US)",
volume = "14",
pages = "801--809",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Prediction of charged device model peak discharge current for microelectronic components

AU - Shukla, Vrashank

AU - Boselli, Gianluca

AU - Dissegna, Mariano

AU - Duvvury, Charvaka

AU - Sankaralingam, Raj

AU - Rosenbaum, Elyse

PY - 2014/9/1

Y1 - 2014/9/1

N2 - This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

AB - This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

KW - CDM

KW - ESD

KW - peak current stress

UR - http://www.scopus.com/inward/record.url?scp=84930939873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930939873&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2014.2342241

DO - 10.1109/TDMR.2014.2342241

M3 - Article

AN - SCOPUS:84930939873

VL - 14

SP - 801

EP - 809

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 3

M1 - 6862855

ER -