Prediction of charged device model peak discharge current for microelectronic components

Vrashank Shukla, Gianluca Boselli, Mariano Dissegna, Charvaka Duvvury, Raj Sankaralingam, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

Original languageEnglish (US)
Article number6862855
Pages (from-to)801-809
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume14
Issue number3
DOIs
StatePublished - Sep 1 2014

Keywords

  • CDM
  • ESD
  • peak current stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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