Prediction of charged device model peak discharge current for microelectronic components

Vrashank Shukla; Gianluca Boselli; Mariano Dissegna; Charvaka Duvvury; Raj Sankaralingam; Elyse Rosenbaum

doi:10.1109/TDMR.2014.2342241

Prediction of charged device model peak discharge current for microelectronic components

Vrashank Shukla, Gianluca Boselli, Mariano Dissegna, Charvaka Duvvury, Raj Sankaralingam, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

Original language	English (US)
Article number	6862855
Pages (from-to)	801-809
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/TDMR.2014.2342241
State	Published - Sep 1 2014

Keywords

CDM
ESD
peak current stress

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Online availability

10.1109/TDMR.2014.2342241

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AU - Sankaralingam, Raj

AU - Rosenbaum, Elyse

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AB - This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.

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Prediction of charged device model peak discharge current for microelectronic components

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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