Precursor mechanism for interaction of bulk interstitial atoms with Si(100)

Xiao Zhang, Min Yu, Charlotte T.M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

In the same way that gases react with surfaces from above, solid-state point defects such as interstitial atoms can react from below. Little attention has been paid to this form of surface chemistry. Recent bulk self-diffusion measurements near the Si(100) surface have quantified Si interstitial annihilation rates, and shown that these rates can be described by an annihilation probability that varies by two orders of magnitude in response to saturation of surface dangling bonds by submonolayer gas adsorption. The present work shows by modeling that the interstitial annihilation kinetics are well described by a precursor mechanism in which interstitials move substantial distances parallel to the surface before incorporation.

Original languageEnglish (US)
Article number235301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number23
DOIs
StatePublished - Dec 11 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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