Precision electrical trimming of very low TCR poly-SiGe resistors

J. A. Babcock, P. Francis, R. Bashir, A. E. Kabir, D. K. Schroder, M. S.L. Lee, T. Dhayagude, W. Yindeepol, S. J. Prasad, A. Kalnitsky, M. E. Thomas, H. Haggag, K. Egan, A. Bergemont, P. Jansen

Research output: Contribution to journalArticlepeer-review


Precision electrical trimming of stacked Si/SiGe polycrystalline resistors available from the extrinsic base structure of a SiGe BiCMOS technology has been demonstrated for the first time. It is shown that pulse current trimming techniques can be used to trim the poly-SiGe resistors by up to 50% from their original values with accuracy better than ±0.5%. The temperature coefficient of resistance (TCR) is shown to be linearly proportional to the percent change in electrically trimmed poly-SiGe resistance. Finally, we demonstrate resistance cycling using an electrical trim/recovery sequence, indicating that the technique is reversible and is governed by dopant segregation/diffusion mechanisms. The results are consistent with those obtained on conventional polysilicon resistors suggesting that the introduction of a strained SiGe layer does not adversely affect the electrical trim properties of these resistors.

Original languageEnglish (US)
Pages (from-to)283-285
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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