Practical processing issues in titanium suicide CVD

This laboratory has recently developed a new process for the chemical vapor deposition of titanium disilicide on Si. The present work moves beyond the kinetic characterization of previous efforts to examine how this process works in terms of material properties, surface/interface roughness, dopant redistribution, nucleation control and selectivity/overgrowth on both SiO ₂ and Si ₃ N ₄ . While questions remain about the surface structures responsible for nucleation, in all aspects examined here the process appears suitable for device fabrication.