Practical processing issues in titanium suicide CVD

R. P. Southwell, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


This laboratory has recently developed a new process for the chemical vapor deposition of titanium disilicide on Si. The present work moves beyond the kinetic characterization of previous efforts to examine how this process works in terms of material properties, surface/interface roughness, dopant redistribution, nucleation control and selectivity/overgrowth on both SiO 2 and Si 3 N 4 . While questions remain about the surface structures responsible for nucleation, in all aspects examined here the process appears suitable for device fabrication.

Original languageEnglish (US)
Pages (from-to)41-49
Number of pages9
JournalApplied Surface Science
Issue number1-2
StatePublished - Sep 1997

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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