TY - GEN
T1 - Power-Efficient Ovenized Lithium Niobate SH0 Resonator Arrays with Passive Temperature Compensation
AU - Li, Ming Huang
AU - Chen, Chao Yu
AU - Lu, Ruochen
AU - Yang, Yansong
AU - Wu, Tao
AU - Gong, Songbin
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - In this work, we demonstrate, for the first time, a micro-oven-integrated 170 MHz microelectromechanical systems (MEMS) resonator array implemented in a 36°-rotated-Y-Cut lithium niobate on silicon oxide (LN-OX) platform using the fundamental shear horizontal (SH0) mode. The array not only attains a high heating efficiency of 33 K/mW but also exhibits a promising electromechanical coupling coefficient ({k-{t}}^{2}) of 9.6%, a quality factor (Q) of 1360, a resulting figure of merit (\text{FoM}={k-{t}}^{2}\cdot Q) of 130, and a passively-compensated temperature coefficient of frequency (TCF) of 13.8 ppm/K. The design of the individual resonator in the array, namely a weighted 3-electrode resonator with embedded heaters on the suspended busbars, is the key to achieving the high heating efficiency while mitigating spurious modes across a wide frequency span (100-300 MHz).
AB - In this work, we demonstrate, for the first time, a micro-oven-integrated 170 MHz microelectromechanical systems (MEMS) resonator array implemented in a 36°-rotated-Y-Cut lithium niobate on silicon oxide (LN-OX) platform using the fundamental shear horizontal (SH0) mode. The array not only attains a high heating efficiency of 33 K/mW but also exhibits a promising electromechanical coupling coefficient ({k-{t}}^{2}) of 9.6%, a quality factor (Q) of 1360, a resulting figure of merit (\text{FoM}={k-{t}}^{2}\cdot Q) of 130, and a passively-compensated temperature coefficient of frequency (TCF) of 13.8 ppm/K. The design of the individual resonator in the array, namely a weighted 3-electrode resonator with embedded heaters on the suspended busbars, is the key to achieving the high heating efficiency while mitigating spurious modes across a wide frequency span (100-300 MHz).
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U2 - 10.1109/MEMSYS.2019.8870707
DO - 10.1109/MEMSYS.2019.8870707
M3 - Conference contribution
AN - SCOPUS:85074357371
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 911
EP - 914
BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
Y2 - 27 January 2019 through 31 January 2019
ER -