Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2 × 75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2 × 25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.
- Delta doping
- Gallium nitride
- Heterojunction field-effect transistor (HFET)
- High-electron mobility transistor (HEMT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering