Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

Mark D. Hampson, Shyh Chiang Shen, Randal S. Schwindt, R. Kirk Price, Uttiya Chowdhury, Michael M. Wong, Ting Gang Zhu, Dongwon Yoo, Russell D. Dupuis, Milton Feng

Research output: Contribution to journalLetter

Abstract

Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2 × 75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2 × 25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.

Original languageEnglish (US)
Pages (from-to)238-240
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number5
DOIs
StatePublished - May 1 2004

Fingerprint

Surface states
Passivation
Polyimides
Organic Chemicals
Wave power
Organic chemicals
Field effect transistors
Dislocations (crystals)
Heterojunctions
Chemical vapor deposition
Metals
aluminum gallium nitride

Keywords

  • Delta doping
  • Gallium nitride
  • Heterojunction field-effect transistor (HFET)
  • High-electron mobility transistor (HEMT)
  • Polyimide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hampson, M. D., Shen, S. C., Schwindt, R. S., Price, R. K., Chowdhury, U., Wong, M. M., ... Feng, M. (2004). Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Device Letters, 25(5), 238-240. https://doi.org/10.1109/LED.2004.826565

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz. / Hampson, Mark D.; Shen, Shyh Chiang; Schwindt, Randal S.; Price, R. Kirk; Chowdhury, Uttiya; Wong, Michael M.; Gang Zhu, Ting; Yoo, Dongwon; Dupuis, Russell D.; Feng, Milton.

In: IEEE Electron Device Letters, Vol. 25, No. 5, 01.05.2004, p. 238-240.

Research output: Contribution to journalLetter

Hampson, MD, Shen, SC, Schwindt, RS, Price, RK, Chowdhury, U, Wong, MM, Gang Zhu, T, Yoo, D, Dupuis, RD & Feng, M 2004, 'Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz', IEEE Electron Device Letters, vol. 25, no. 5, pp. 238-240. https://doi.org/10.1109/LED.2004.826565
Hampson MD, Shen SC, Schwindt RS, Price RK, Chowdhury U, Wong MM et al. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Device Letters. 2004 May 1;25(5):238-240. https://doi.org/10.1109/LED.2004.826565
Hampson, Mark D. ; Shen, Shyh Chiang ; Schwindt, Randal S. ; Price, R. Kirk ; Chowdhury, Uttiya ; Wong, Michael M. ; Gang Zhu, Ting ; Yoo, Dongwon ; Dupuis, Russell D. ; Feng, Milton. / Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz. In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 5. pp. 238-240.
@article{243cf04a818b40408e43fe1ec230ab6a,
title = "Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz",
abstract = "Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2 × 75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5{\%} to 24.47{\%} in power added efficiency. Additionally, a 2 × 25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.",
keywords = "Delta doping, Gallium nitride, Heterojunction field-effect transistor (HFET), High-electron mobility transistor (HEMT), Polyimide",
author = "Hampson, {Mark D.} and Shen, {Shyh Chiang} and Schwindt, {Randal S.} and Price, {R. Kirk} and Uttiya Chowdhury and Wong, {Michael M.} and {Gang Zhu}, Ting and Dongwon Yoo and Dupuis, {Russell D.} and Milton Feng",
year = "2004",
month = "5",
day = "1",
doi = "10.1109/LED.2004.826565",
language = "English (US)",
volume = "25",
pages = "238--240",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

AU - Hampson, Mark D.

AU - Shen, Shyh Chiang

AU - Schwindt, Randal S.

AU - Price, R. Kirk

AU - Chowdhury, Uttiya

AU - Wong, Michael M.

AU - Gang Zhu, Ting

AU - Yoo, Dongwon

AU - Dupuis, Russell D.

AU - Feng, Milton

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2 × 75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2 × 25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.

AB - Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2 × 75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2 × 25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.

KW - Delta doping

KW - Gallium nitride

KW - Heterojunction field-effect transistor (HFET)

KW - High-electron mobility transistor (HEMT)

KW - Polyimide

UR - http://www.scopus.com/inward/record.url?scp=2442602489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442602489&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.826565

DO - 10.1109/LED.2004.826565

M3 - Letter

AN - SCOPUS:2442602489

VL - 25

SP - 238

EP - 240

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

ER -