Polarized light emission from grain boundaries in photovoltaic silicon

T. W. Lin, L. P. Rowe, A. J. Kaczkowski, G. P. Horn, Harley T Johnson

Research output: Contribution to journalArticle

Abstract

Some crystalline defects in photovoltaic silicon have deleterious effects on the energy conversion efficiency of the material. Distinguishing the harmful defects from the benign defects is a critical problem in the mechanics of materials for solar energy conversion. Interestingly, the visible light absorbed by silicon in the same part of the solar spectrum that is used to generate photocurrent, can also excite photoluminescence, which may be used to generate images of the microstructure. Slightly longer wavelengths in the near infrared (IR) may be used to measure strain in the material via photoelastic (PE) imaging. These two imaging modalities have recently been combined in a single instrument, and we show here the additional capability to identify and categorize defects directly by capturing the narrow band of photoluminescence emitted by regions of high dislocation density. We use this method to show that dislocations arranged in low angle grain boundaries emit polarized light, while dislocation structures in neighboring high angle grain boundaries do not emit polarized light. This capability may form the basis for next-generation, full-field optomechanics-based characterization of materials for solar energy conversion.

Original languageEnglish (US)
Pages (from-to)397-404
Number of pages8
JournalExtreme Mechanics Letters
Volume9
DOIs
StatePublished - Dec 1 2016

Fingerprint

Light emission
Silicon
Light polarization
Grain boundaries
Energy conversion
Defects
Dislocations (crystals)
Solar energy
Photoluminescence
Imaging techniques
Photocurrents
Conversion efficiency
Mechanics
Crystalline materials
Infrared radiation
Wavelength
Microstructure

ASJC Scopus subject areas

  • Bioengineering
  • Chemical Engineering (miscellaneous)
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Polarized light emission from grain boundaries in photovoltaic silicon. / Lin, T. W.; Rowe, L. P.; Kaczkowski, A. J.; Horn, G. P.; Johnson, Harley T.

In: Extreme Mechanics Letters, Vol. 9, 01.12.2016, p. 397-404.

Research output: Contribution to journalArticle

Lin, T. W. ; Rowe, L. P. ; Kaczkowski, A. J. ; Horn, G. P. ; Johnson, Harley T. / Polarized light emission from grain boundaries in photovoltaic silicon. In: Extreme Mechanics Letters. 2016 ; Vol. 9. pp. 397-404.
@article{dfdce910a13e49b19a57801621141b66,
title = "Polarized light emission from grain boundaries in photovoltaic silicon",
abstract = "Some crystalline defects in photovoltaic silicon have deleterious effects on the energy conversion efficiency of the material. Distinguishing the harmful defects from the benign defects is a critical problem in the mechanics of materials for solar energy conversion. Interestingly, the visible light absorbed by silicon in the same part of the solar spectrum that is used to generate photocurrent, can also excite photoluminescence, which may be used to generate images of the microstructure. Slightly longer wavelengths in the near infrared (IR) may be used to measure strain in the material via photoelastic (PE) imaging. These two imaging modalities have recently been combined in a single instrument, and we show here the additional capability to identify and categorize defects directly by capturing the narrow band of photoluminescence emitted by regions of high dislocation density. We use this method to show that dislocations arranged in low angle grain boundaries emit polarized light, while dislocation structures in neighboring high angle grain boundaries do not emit polarized light. This capability may form the basis for next-generation, full-field optomechanics-based characterization of materials for solar energy conversion.",
author = "Lin, {T. W.} and Rowe, {L. P.} and Kaczkowski, {A. J.} and Horn, {G. P.} and Johnson, {Harley T}",
year = "2016",
month = "12",
day = "1",
doi = "10.1016/j.eml.2016.04.008",
language = "English (US)",
volume = "9",
pages = "397--404",
journal = "Extreme Mechanics Letters",
issn = "2352-4316",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Polarized light emission from grain boundaries in photovoltaic silicon

AU - Lin, T. W.

AU - Rowe, L. P.

AU - Kaczkowski, A. J.

AU - Horn, G. P.

AU - Johnson, Harley T

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Some crystalline defects in photovoltaic silicon have deleterious effects on the energy conversion efficiency of the material. Distinguishing the harmful defects from the benign defects is a critical problem in the mechanics of materials for solar energy conversion. Interestingly, the visible light absorbed by silicon in the same part of the solar spectrum that is used to generate photocurrent, can also excite photoluminescence, which may be used to generate images of the microstructure. Slightly longer wavelengths in the near infrared (IR) may be used to measure strain in the material via photoelastic (PE) imaging. These two imaging modalities have recently been combined in a single instrument, and we show here the additional capability to identify and categorize defects directly by capturing the narrow band of photoluminescence emitted by regions of high dislocation density. We use this method to show that dislocations arranged in low angle grain boundaries emit polarized light, while dislocation structures in neighboring high angle grain boundaries do not emit polarized light. This capability may form the basis for next-generation, full-field optomechanics-based characterization of materials for solar energy conversion.

AB - Some crystalline defects in photovoltaic silicon have deleterious effects on the energy conversion efficiency of the material. Distinguishing the harmful defects from the benign defects is a critical problem in the mechanics of materials for solar energy conversion. Interestingly, the visible light absorbed by silicon in the same part of the solar spectrum that is used to generate photocurrent, can also excite photoluminescence, which may be used to generate images of the microstructure. Slightly longer wavelengths in the near infrared (IR) may be used to measure strain in the material via photoelastic (PE) imaging. These two imaging modalities have recently been combined in a single instrument, and we show here the additional capability to identify and categorize defects directly by capturing the narrow band of photoluminescence emitted by regions of high dislocation density. We use this method to show that dislocations arranged in low angle grain boundaries emit polarized light, while dislocation structures in neighboring high angle grain boundaries do not emit polarized light. This capability may form the basis for next-generation, full-field optomechanics-based characterization of materials for solar energy conversion.

UR - http://www.scopus.com/inward/record.url?scp=84971290758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971290758&partnerID=8YFLogxK

U2 - 10.1016/j.eml.2016.04.008

DO - 10.1016/j.eml.2016.04.008

M3 - Article

AN - SCOPUS:84971290758

VL - 9

SP - 397

EP - 404

JO - Extreme Mechanics Letters

JF - Extreme Mechanics Letters

SN - 2352-4316

ER -