@inproceedings{1e9cefd1878d4ec6945ecdf11e804cf3,
title = "Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)",
abstract = "This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet and visible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells, respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strong polarization fields exist across the structure contributing to the droop behavior - a phenomenon defined as the reduction in emitter efficiency as injection current increases. The elimination of piezoelectric fields in GaN-based emitters as proposed in this work provide the potential for achieving a 100% internal efficiency and might lead to droopfree light emitting diodes. In addition, this work demonstrates co-integration of GaN emitters on cheap and scalable CMOS-compatible Si (100) substrate, which yields possibility of realizing a GaN laser diode uniquely - via forming mirrors along the naturally occurring cubic phase GaN-Si(100) cleavage planes.",
keywords = "Gallium Nitride, Silicon, cubic, light emitting diode, polarization",
author = "Can Bayram and J. Ott and Shiu, {K. T.} and Cheng, {C. W.} and Y. Zhu and J. Kim and Sadana, {D. K.} and M. Razeghi",
note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Quantum Sensing and Nanophotonic Devices XII ; Conference date: 08-02-2015 Through 12-02-2015",
year = "2015",
doi = "10.1117/12.2082894",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Manijeh Razeghi and Eric Tournie and Brown, {Gail J.}",
booktitle = "Quantum Sensing and Nanophotonic Devices XII",
}