A method of laser-assisted plasma etching with polarized light comprises providing a surface of a substrate that includes at least one surface region having trenches arranged in a unidirectional pattern along an x-direction or a y-direction of the surface, where each trench has a depth along a z-direction. The trenches extend substantially in parallel with each other and have a half-pitch of about 100 nm or less. The surface is exposed to a plasma and simultaneously illuminated with a pulsed laser beam having a predetermined polarization along the x-direction or the y-direction, and the trenches are etched.
|Original language||English (US)|
|U.S. patent number||10510550|
|State||Published - Dec 17 2019|