Plasma-induced damage caused by inductively coupled plasma reactive ion etching in Cl 2 /Ar gas mixtures on GaN was extensively studied. ICP coil power and plasma exposure duration affected the plasma-induced damage minimally. Bias voltage was found to be the most significant cause of the plasma-induced damage. Auger electron spectroscopy of the etched samples showed that the plasma etching conditions being studied produced very little variation in the surface stoichiometry of the etched samples.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering