Abstract
Plasma-induced damage caused by inductively coupled plasma reactive ion etching in Cl 2 /Ar gas mixtures on GaN was extensively studied. ICP coil power and plasma exposure duration affected the plasma-induced damage minimally. Bias voltage was found to be the most significant cause of the plasma-induced damage. Auger electron spectroscopy of the etched samples showed that the plasma etching conditions being studied produced very little variation in the surface stoichiometry of the etched samples.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2926-2929 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 19 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 2001 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering