Plasma-free anisotropic etching of GaN

Clarence Y. Chan, Shunya Namiki, Jennifer K. Hite, Xiuling Li

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate doping and growth dependent photo-enhanced metal-assisted chemical etching of homoepitaxial n-GaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.

Original languageEnglish (US)
Article numberSTh4J.5
JournalOptics InfoBase Conference Papers
StatePublished - 2021
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: May 9 2021May 14 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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