@inproceedings{99e3b0f5d1bb4f0caf06e6dc4966155e,
title = "Plasma-free Anisotropic Etching of GaN",
abstract = "We demonstrate doping and growth dependent photo-enhanced metal-assisted chemical etching of homoepitaxial n-GaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.",
author = "Chan, {Clarence Y.} and Shunya Namiki and Hite, {Jennifer K.} and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2021 OSA.; 2021 Conference on Lasers and Electro-Optics, CLEO 2021 ; Conference date: 09-05-2021 Through 14-05-2021",
year = "2021",
month = may,
language = "English (US)",
series = "2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings",
address = "United States",
}