Abstract
The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.
Original language | English (US) |
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Pages (from-to) | 1562-1564 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 10 |
DOIs | |
State | Published - Mar 10 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)