Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z. Q. Fang; D. C. Look; X. L. Wang; Jung Han; F. A. Khan; I. Adesida

doi:10.1063/1.1560562

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z. Q. Fang, D. C. Look, X. L. Wang, Jung Han, F. A. Khan, I. Adesida

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Abstract

The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.

Original language	English (US)
Pages (from-to)	1562-1564
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	10
DOIs	https://doi.org/10.1063/1.1560562
State	Published - Mar 10 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{59334081cb9647cfa0dce774078119c2,

title = "Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition",

abstract = "The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.",

author = "Fang, {Z. Q.} and Look, {D. C.} and Wang, {X. L.} and Jung Han and Khan, {F. A.} and I. Adesida",

year = "2003",

month = mar,

day = "10",

doi = "10.1063/1.1560562",

language = "English (US)",

volume = "82",

pages = "1562--1564",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Wang, X. L.

AU - Han, Jung

AU - Khan, F. A.

AU - Adesida, I.

PY - 2003/3/10

Y1 - 2003/3/10

N2 - The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.

AB - The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.

UR - http://www.scopus.com/inward/record.url?scp=0037429818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037429818&partnerID=8YFLogxK

U2 - 10.1063/1.1560562

DO - 10.1063/1.1560562

M3 - Article

AN - SCOPUS:0037429818

VL - 82

SP - 1562

EP - 1564

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Abstract

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