Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

The deep centers in unintentionally doped n-gallium nitride samples grown by metalorganic chemical-vapour deposition were subjected to plasma reactive ion etching. The deep-level transient spectroscopy (DLTS) was used to demonstrate that a well-known trap is enhanced in n-gallium nitride by plasma etching. The carrier concentrations in the control and plasma-etched samples were determined by the capacitance-voltage measurements.