Plasma-edge diagnostics based on Pd-MOS diodes

R. Bastasz; B. L. Cain; T. E. Cayton; R. C. Hughes; D. N. Ruzic

doi:10.1016/0022-3115(89)90332-2

Plasma-edge diagnostics based on Pd-MOS diodes

R. Bastasz, B. L. Cain, T. E. Cayton, R. C. Hughes, D. N. Ruzic

Research output: Contribution to journal › Article › peer-review

Abstract

Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO₂ interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.

Original language	English (US)
Pages (from-to)	587-592
Number of pages	6
Journal	Journal of Nuclear Materials
Volume	162-164
Issue number	C
DOIs	https://doi.org/10.1016/0022-3115(89)90332-2
State	Published - Apr 1 1989

Keywords

Pd-MOS diodes
charge-exchange particles
hydrogen-flux monitor
plasma-edge diagnostics
solid-state detectors

ASJC Scopus subject areas

Nuclear and High Energy Physics
General Materials Science
Nuclear Energy and Engineering

Online availability

10.1016/0022-3115(89)90332-2

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title = "Plasma-edge diagnostics based on Pd-MOS diodes",

abstract = "Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.",

keywords = "Pd-MOS diodes, charge-exchange particles, hydrogen-flux monitor, plasma-edge diagnostics, solid-state detectors",

author = "R. Bastasz and Cain, {B. L.} and Cayton, {T. E.} and Hughes, {R. C.} and Ruzic, {D. N.}",

note = "Funding Information: The technical assistance of K.L. Black, D.H. Morse and J.A. Whaley in performing the laboratory experiments is gratefully acknowledged. The ZT-40M mea-surementsw ere made with abundant help from L.J. Iko, T.L. Petersen, J.C. Ingraham, and C.P. Munson. BLC acknowledges assistance from the Magnetic Fusion Energy Technology Fellowship program administered by Oak Ridge Associated Universities for the US Department of Energy. DNR acknowledges support of the Presidential Young Investigators program of the National Science Foundation through grant CBT-84-51599. This work was also supported by the US Department of Energy under contract DE-AC04-76DP00789.",

year = "1989",

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doi = "10.1016/0022-3115(89)90332-2",

language = "English (US)",

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AU - Ruzic, D. N.

N1 - Funding Information: The technical assistance of K.L. Black, D.H. Morse and J.A. Whaley in performing the laboratory experiments is gratefully acknowledged. The ZT-40M mea-surementsw ere made with abundant help from L.J. Iko, T.L. Petersen, J.C. Ingraham, and C.P. Munson. BLC acknowledges assistance from the Magnetic Fusion Energy Technology Fellowship program administered by Oak Ridge Associated Universities for the US Department of Energy. DNR acknowledges support of the Presidential Young Investigators program of the National Science Foundation through grant CBT-84-51599. This work was also supported by the US Department of Energy under contract DE-AC04-76DP00789.

PY - 1989/4/1

Y1 - 1989/4/1

N2 - Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.

AB - Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.

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Plasma-edge diagnostics based on Pd-MOS diodes

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