TY - JOUR
T1 - Plasma-edge diagnostics based on Pd-MOS diodes
AU - Bastasz, R.
AU - Cain, B. L.
AU - Cayton, T. E.
AU - Hughes, R. C.
AU - Ruzic, D. N.
N1 - Funding Information:
The technical assistance of K.L. Black, D.H. Morse and J.A. Whaley in performing the laboratory experiments is gratefully acknowledged. The ZT-40M mea-surementsw ere made with abundant help from L.J. Iko, T.L. Petersen, J.C. Ingraham, and C.P. Munson. BLC acknowledges assistance from the Magnetic Fusion Energy Technology Fellowship program administered by Oak Ridge Associated Universities for the US Department of Energy. DNR acknowledges support of the Presidential Young Investigators program of the National Science Foundation through grant CBT-84-51599. This work was also supported by the US Department of Energy under contract DE-AC04-76DP00789.
PY - 1989/4/1
Y1 - 1989/4/1
N2 - Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.
AB - Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.
KW - Pd-MOS diodes
KW - charge-exchange particles
KW - hydrogen-flux monitor
KW - plasma-edge diagnostics
KW - solid-state detectors
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U2 - 10.1016/0022-3115(89)90332-2
DO - 10.1016/0022-3115(89)90332-2
M3 - Article
AN - SCOPUS:22244441238
SN - 0022-3115
VL - 162-164
SP - 587
EP - 592
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - C
ER -