Plasma-edge diagnostics based on Pd-MOS diodes

R. Bastasz, B. L. Cain, T. E. Cayton, R. C. Hughes, D. N. Ruzic

Research output: Contribution to journalArticlepeer-review


Pd metal-oxide-semiconductor (MOS) devices can be used to detect energetic hydrogen atoms. H isotopes implanted into a Pd-MOS diode quickly diffuse through the Pd layer and are accommodated at available Pd-SiO2 interface sites, causing an increase in the leakage current through the device. We find that a diode's response to energetic hydrogen is rapid, sensitive, dosimetric, and reproducible. Pd-MOS diodes can be regenerated when saturated with hydrogen by heating to 100-200°C for a few minutes. These properties make Pd-MOS diodes useful for plasma-edge diagnosis of hydrogen particle fluence when the energy distribution of the incident hydrogen is known. Pd-MOS diode sensors have been used in the laboratory and in the ZT-40M reversed-field pinch to measure energetic hydrogen fluxes. Their small size allows placement in locations inaccessible to conventional diagnostics and should provide a means for remote monitoring of hydrogen fluxes to plasma-facing surfaces.

Original languageEnglish (US)
Pages (from-to)587-592
Number of pages6
JournalJournal of Nuclear Materials
Issue numberC
StatePublished - Apr 1 1989


  • Pd-MOS diodes
  • charge-exchange particles
  • hydrogen-flux monitor
  • plasma-edge diagnostics
  • solid-state detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering


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