Abstract
In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity in processing which doesn't require lithography and chemical etching, potentially smaller feature sizes than defined by lithography and inherent high carrier mobility. However, there are three main challenges of realizing bottom-up grown NW-FET based circuits including: controllability of NW growth direction and positioning; uniformity of NW electrical property; and compatibility with planar processing.
| Original language | English (US) |
|---|---|
| Title of host publication | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Event | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011 |
Publication series
| Name | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
|---|
Other
| Other | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
|---|---|
| Country | United States |
| City | College Park, MD |
| Period | 12/7/11 → 12/9/11 |
Fingerprint
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Planar VLS grown GaAs nanowire array based HEMTs. / Miao, Xin; Li, Xiuling.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135169 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Planar VLS grown GaAs nanowire array based HEMTs
AU - Miao, Xin
AU - Li, Xiuling
PY - 2011/12/1
Y1 - 2011/12/1
N2 - In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity in processing which doesn't require lithography and chemical etching, potentially smaller feature sizes than defined by lithography and inherent high carrier mobility. However, there are three main challenges of realizing bottom-up grown NW-FET based circuits including: controllability of NW growth direction and positioning; uniformity of NW electrical property; and compatibility with planar processing.
AB - In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity in processing which doesn't require lithography and chemical etching, potentially smaller feature sizes than defined by lithography and inherent high carrier mobility. However, there are three main challenges of realizing bottom-up grown NW-FET based circuits including: controllability of NW growth direction and positioning; uniformity of NW electrical property; and compatibility with planar processing.
UR - http://www.scopus.com/inward/record.url?scp=84863157591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863157591&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2011.6135169
DO - 10.1109/ISDRS.2011.6135169
M3 - Conference contribution
AN - SCOPUS:84863157591
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
ER -