Planar VLS grown GaAs nanowire array based HEMTs

Xin Miao; Xiuling Li

doi:10.1109/ISDRS.2011.6135169

Planar VLS grown GaAs nanowire array based HEMTs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity in processing which doesn't require lithography and chemical etching, potentially smaller feature sizes than defined by lithography and inherent high carrier mobility. However, there are three main challenges of realizing bottom-up grown NW-FET based circuits including: controllability of NW growth direction and positioning; uniformity of NW electrical property; and compatibility with planar processing.

Original language	English (US)
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135169
State	Published - Dec 1 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country	United States
City	College Park, MD
Period	12/7/11 → 12/9/11

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2011.6135169

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Miao, X., & Li, X. (2011). Planar VLS grown GaAs nanowire array based HEMTs. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135169] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135169

Miao, X & Li, X 2011, Planar VLS grown GaAs nanowire array based HEMTs. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135169, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135169

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abstract = "In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity in processing which doesn't require lithography and chemical etching, potentially smaller feature sizes than defined by lithography and inherent high carrier mobility. However, there are three main challenges of realizing bottom-up grown NW-FET based circuits including: controllability of NW growth direction and positioning; uniformity of NW electrical property; and compatibility with planar processing.",

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