Planar native-oxide index-guided AlxGa1- xAs-GaAs quantum well heterostructure lasers

F. A. Kish; S. J. Caracci; N. Holonyak; J. M. Dallesasse; K. C. Hsieh; M. J. Ries; S. C. Smith; R. D. Burnham

doi:10.1063/1.106240

Planar native-oxide index-guided Al_xGa_1- _xAs-GaAs quantum well heterostructure lasers

F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, K. C. Hsieh, M. J. Ries, S. C. Smith, R. D. Burnham

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Abstract

A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap Al_xGa_1-xAs in a "wet" ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) Al_xGa_1-xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.

Original language	English (US)
Pages (from-to)	1755-1757
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	14
DOIs	https://doi.org/10.1063/1.106240
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106240

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Cite this

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title = "Planar native-oxide index-guided AlxGa1- xAs-GaAs quantum well heterostructure lasers",

abstract = "A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap AlxGa1-xAs in a {"}wet{"} ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) AlxGa1-xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.",

author = "Kish, {F. A.} and Caracci, {S. J.} and N. Holonyak and Dallesasse, {J. M.} and Hsieh, {K. C.} and Ries, {M. J.} and Smith, {S. C.} and Burnham, {R. D.}",

year = "1991",

doi = "10.1063/1.106240",

language = "English (US)",

volume = "59",

pages = "1755--1757",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Planar native-oxide index-guided AlxGa1- xAs-GaAs quantum well heterostructure lasers

AU - Kish, F. A.

AU - Caracci, S. J.

AU - Holonyak, N.

AU - Dallesasse, J. M.

AU - Hsieh, K. C.

AU - Ries, M. J.

AU - Smith, S. C.

AU - Burnham, R. D.

PY - 1991

Y1 - 1991

N2 - A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap AlxGa1-xAs in a "wet" ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) AlxGa1-xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.

AB - A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap AlxGa1-xAs in a "wet" ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) AlxGa1-xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.

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