Planar native-oxide index-guided AlxGa1- xAs-GaAs quantum well heterostructure lasers

F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, K. C. Hsieh, M. J. Ries, S. C. Smith, R. D. Burnham

Research output: Contribution to journalArticlepeer-review


A new form of planar index-guided laser diode is demonstrated with a relatively thick (∼0.4 μm) native oxide employed to define the lateral optical waveguide (transverse to the laser stripe). Oxidation of high-gap AlxGa1-xAs in a "wet" ambient results in the transformation of most of the upper confining layer to a lower-index current-blocking native oxide outside of the active stripe. Planar quantum well heterostructure (QWH) AlxGa1-xAs-GaAs laser diodes fabricated by this process exhibit both optical and current confinement. Continuous 300 K threshold currents as low as 10 mA (uncoated facets) and kink-free single-longitudinal-mode operation are demonstrated for ∼2-μm-wide active region devices.

Original languageEnglish (US)
Pages (from-to)1755-1757
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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