Depletion-mode metal-oxide-semiconductor field effect transistors (MOSFETs) with GaAs planar nanowire (NW) channels are successfully demonstrated. The Si-doped planar GaAs NWs are grown in a selective lateral epitaxy manner via Au-assisted vapor-liquid-solid (VLS) mechanism. A SiO2 interlayer between the multi-faceted NW and Al2O3 high-k dielectric formed by atomic layer deposition (ALD) improves the NW MOSFET performance.
- Metal-oxide-semiconductor field effect transistor (MOSFET)
- Metalorganic chemical vapor deposition (MOCVD)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry