Abstract

Depletion-mode metal-oxide-semiconductor field effect transistors (MOSFETs) with GaAs planar nanowire (NW) channels are successfully demonstrated. The Si-doped planar GaAs NWs are grown in a selective lateral epitaxy manner via Au-assisted vapor-liquid-solid (VLS) mechanism. A SiO2 interlayer between the multi-faceted NW and Al2O3 high-k dielectric formed by atomic layer deposition (ALD) improves the NW MOSFET performance.

Original languageEnglish (US)
Pages (from-to)40-42
Number of pages3
JournalSolid-State Electronics
Volume93
DOIs
StatePublished - Mar 2014

Keywords

  • Metal-oxide-semiconductor field effect transistor (MOSFET)
  • Metalorganic chemical vapor deposition (MOCVD)
  • Nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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