This paper reports the temperature-dependant electrical resistivity and piezoresistive characteristics of boron-doped ultrananocyrstalline diamond (UNCD), and the fabrication of piezoresistive microcantilevers using boron-doped and undoped UNCD. The devices consist of 1 μm thick doped UNCD on either 1 or 2 μm thick undoped UNCD. Over the temperature range 25-200 °C, the doped UNCD has a temperature coefficient of electrical resistance of-1.4 × 10 -3 °C -1 . The doped UNCD exhibits a significant piezoresistive effect with gauge factor of 7.5 and a piezoresistive coefficient of 8.12 × 10 -12 Pa -1 at 25 °C. The piezoresistive properties of UNCD are constant over the temperature range 25-200 °C. Microcantilevers of length 300 μm have deflection sensitivity of 0.186 mΩ/Ω per µm of cantilever end deflection. These measurements of electrical and piezoresistive properties of doped UNCD could aid the design of future diamond microsystems.

Original languageEnglish (US)
Title of host publication2010 Solid-State Sensors, Actuators, and Microsystems Workshop
EditorsDavid J. Monk, Kimberly L. Turner
PublisherTransducer Research Foundation
Number of pages4
ISBN (Electronic)0964002485, 9780964002487
StatePublished - 2010
Event2010 Solid-State Sensors, Actuators, and Microsystems Workshop - Hilton Head Island, United States
Duration: Jun 6 2010Jun 10 2010

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop


Conference2010 Solid-State Sensors, Actuators, and Microsystems Workshop
Country/TerritoryUnited States
CityHilton Head Island

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Hardware and Architecture


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