This paper reports on the temperature-dependent electrical resistivity and piezoresistive characteristics of boron-doped ultrananocyrstalline diamond (UNCD) and the fabrication of piezoresistive microcantilevers using boron-doped and undoped UNCD. The devices consist of 1-μm} -thick doped UNCD on either 1- or 2-μm}-thick undoped UNCD. The electrical resistivity of doped UNCD is 0.1 Ω ̇ cm at room temperature, which is five orders of magnitude smaller than the electrical resistivity of undoped UNCD. Over the temperature range of 25 ° C-200° C, the doped UNCD has a temperature coefficient of electrical resistance of (-1.4 × 10-3) per ° C. The doped UNCD exhibits a significant piezoresistive effect with a gauge factor of 7.53 ± 0.32 and a piezoresistive coefficient of 8.12 × 10-12\ Pa-1 at room temperature. The piezoresistive properties of UNCD are constant over the temperature range of 25 ° C-200° C. Microcantilevers having a length of 300μ have a deflection sensitivity of 0.186 mΩ/Ω per micrometer of cantilever end deflection. These measurements of electrical and piezoresistive properties of doped UNCD could aid the design of future diamond microsystems.

Original languageEnglish (US)
Article number5567124
Pages (from-to)1234-1242
Number of pages9
JournalJournal of Microelectromechanical Systems
Issue number5
StatePublished - Oct 2010


  • Diamond
  • microcantilever
  • piezoresistivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

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