Piezoelectric RF resonant voltage amplifiers for IoT applications

Ruochen Lu, Tomas Manzaneque, Michael Breen, Anming Gao, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the design and development of aluminum nitride (AlN) piezoelectric RF resonant voltage amplifiers for Internet of Things (IoT) applications. These devices can provide passive and highly frequency selective voltage gain to RF backends with a capacitive input to drastically enhance sensitivity and to reduce power consumption of the transceiver. Both analytical and finite element models (FEM) have been utilized to identify the optimal designs. Consequently, an AlN voltage amplifier with an open circuit gain of 7.27 and a fractional bandwidth (FBW) of 0.11 % has been demonstrated. This work provides a material-agnostic framework for analytically optimizing piezoelectric voltage amplifiers.

Original languageEnglish (US)
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - Aug 9 2016
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: May 22 2016May 27 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Other

Other2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period5/22/165/27/16

Keywords

  • Aluminum nitride
  • IoT applications
  • RF-MEMS
  • piezoelectric resonators
  • voltage amplifier

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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