@inproceedings{e6ada7afcbe7489f815b320f43419297,
title = "Piezoelectric RF resonant voltage amplifiers for IoT applications",
abstract = "This paper reports the design and development of aluminum nitride (AlN) piezoelectric RF resonant voltage amplifiers for Internet of Things (IoT) applications. These devices can provide passive and highly frequency selective voltage gain to RF backends with a capacitive input to drastically enhance sensitivity and to reduce power consumption of the transceiver. Both analytical and finite element models (FEM) have been utilized to identify the optimal designs. Consequently, an AlN voltage amplifier with an open circuit gain of 7.27 and a fractional bandwidth (FBW) of 0.11 % has been demonstrated. This work provides a material-agnostic framework for analytically optimizing piezoelectric voltage amplifiers.",
keywords = "Aluminum nitride, IoT applications, RF-MEMS, piezoelectric resonators, voltage amplifier",
author = "Ruochen Lu and Tomas Manzaneque and Michael Breen and Anming Gao and Songbin Gong",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540065",
language = "English (US)",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "United States",
}