Physics-based compact modeling of charge transport in nanoscale electronic devices

Keyphrases

• Compact Model 100%
• Electronic Devices 100%
• Physics-based 100%
• Charge Transport 100%
• Nanoscale Electronics 100%
• Compact Modeling 100%
• Circuit Simulator 66%
• Channel Material 66%
• Physics-based Compact Model 66%
• Virtual Source Model 66%
• Bulk Si 33%
• Adaptation 33%
• InGaAs 33%
• MOSFET 33%
• Transistor 33%
• Carbon Nanotubes 33%
• Graphene 33%
• Quasi-ballistic 33%
• Measurement Simulation 33%
• Physics-based Model 33%
• Mathematical Description 33%
• Complementary Role 33%
• Number of Parameters 33%
• Model Equation 33%
• III-N 33%
• Device Characterization 33%
• New Channel 33%
• Detailed Simulation 33%
• Si MOSFET 33%
• Nanotransistor 33%
• Test Drive 33%
• Silicon MOSFET 33%
• III-V-N 33%
• Circuit Simulation Model 33%
• Extremely Thin SOI (ETSOI) 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Charge Transport 100%
• Nanoscale Electronic Device 100%
• Field Effect Transistor 66%
• Source Model 66%
• Graphene 33%
• Nanoscale 33%
• Carbon Nanotube 33%
• Indium Gallium Arsenide 33%
• Limited Number 33%
• Model Parameter 33%
• Underpinnings 33%
• Mathematical Description 33%
• Equation Model 33%
• Simulation Mode 33%

Material Science

• Electronic Circuit 100%
• Silicon 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Field Effect Transistor 66%
• Transistor 33%
• Carbon Nanotube 33%
• Graphene 33%
• Indium Gallium Arsenide 33%