The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.
|Original language||English (US)|
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1994|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering