Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Daniel G. Ballegeer; Ilesanmi Adesida; Catherine Caneau; Raj Bhat

Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Daniel G. Ballegeer, Ilesanmi Adesida, Catherine Caneau, Raj Bhat

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Abstract

The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

Original language	English (US)
Pages (from-to)	331-334
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process. / Ballegeer, Daniel G.; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Raj.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1994, p. 331-334.

Research output: Contribution to journal › Article › peer-review

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abstract = "The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.",

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AU - Adesida, Ilesanmi

AU - Caneau, Catherine

AU - Bhat, Raj

PY - 1994

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AB - The effects of asymmetric recess on device performance was investigated by fabricating MODFET's on OMVPE-grown InAlAs/InGaAs structures both with and without the use of electron beam resist process. The DC and high frequency characteristics of these devices are reported as function of the extent of gate recess toward the drain. The small signal equivalent circuit model element values extracted from high frequency S-parameter measurement are presented.

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JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -

Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process

Abstract

ASJC Scopus subject areas

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