Physical origins of nonlinearity in InP double heterojunction bipolar transistors

H. Xu, E. W. Iverson, K. Y. Cheng, Milton Feng

Research output: Contribution to journalArticle

Abstract

Two tone inter-modulation distortion measurements were performed at 18 GHz to characterize the nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). Two-dimensional hydrodynamic (HD) simulations were also performed, showing that the base push-out and charge accumulation effects are the dominant physical origins of nonlinearity for the Type-I DHBT at high current densities. Comparatively, the Type-I/II DHBT exhibits no such effects. Hence, we conclude that DHBTs having a Type-I/II energy band alignment will have an inherent linearity advantage compared to DHBTs with the Type-I energy band alignment.

Original languageEnglish (US)
Article number113508
JournalApplied Physics Letters
Volume100
Issue number11
DOIs
StatePublished - Mar 12 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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