Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm)

Guan Lin Su; Thomas Frost; Pallab Bhattacharya; John M. Dallesasse

doi:10.1109/IPCon.2015.7323535

Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm)

Guan Lin Su, Thomas Frost, Pallab Bhattacharya, John M. Dallesasse

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a physical model for recently demonstrated indium-rich self-assembled In_0.4Ga_0.6N/GaN quantum-dot-based ridge-waveguide lasers emitting at red wavelengths. Our modeling results match well with the measured Hakki-Paoli gain spectrum and the L-I-V curves.

Original language	English (US)
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	579-580
Number of pages	2
ISBN (Electronic)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323535
State	Published - Nov 9 2015
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: Aug 30 2015 → Aug 31 2015

Publication series

Name	2015 IEEE Photonics Conference, IPC 2015

Other

Other	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	8/30/15 → 8/31/15

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/IPCon.2015.7323535

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Su, G. L., Frost, T., Bhattacharya, P., & Dallesasse, J. M. (2015). Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm). In 2015 IEEE Photonics Conference, IPC 2015 (pp. 579-580). Article 7323535 (2015 IEEE Photonics Conference, IPC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2015.7323535

Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm). / Su, Guan Lin; Frost, Thomas; Bhattacharya, Pallab et al.
2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 579-580 7323535 (2015 IEEE Photonics Conference, IPC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Su, GL, Frost, T, Bhattacharya, P & Dallesasse, JM 2015, Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm). in 2015 IEEE Photonics Conference, IPC 2015., 7323535, 2015 IEEE Photonics Conference, IPC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 579-580, IEEE Photonics Conference, IPC 2015, Reston, United States, 8/30/15. https://doi.org/10.1109/IPCon.2015.7323535

Su GL, Frost T, Bhattacharya P, Dallesasse JM. Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm). In 2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 579-580. 7323535. (2015 IEEE Photonics Conference, IPC 2015). doi: 10.1109/IPCon.2015.7323535

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Physical model for indium-rich InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red λ∼630 nm)

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