Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ∼ 630 nm)

Guan Lin Su, Thomas Frost, Pallab Bhattacharya, John M. Dallesasse

Research output: Contribution to journalArticlepeer-review

Abstract

We present a physical model for recently demonstrated high indium content self-assembled In0.4Ga0.6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red wavelengths. The strain distribution in the QD is calculated using linear elastic theory with the application of shrink-fit boundary condition at the InGaN/GaN material interface, and the electronic states are evaluated using a single-band effective mass Hamiltonian. A Schrödinger-Poisson self-consistent solver is used to describe the effect of charge screening under current injection. Our theoretical result shows a good match to the measured Hakki-Paoli gain spectrum. Combining the calculated gain spectrum and cavity properties, we have developed a device-level simulation to successfully explain the electrical and optical characteristics of this specific laser. Possible solutions to improving the device performance have been explored.

Original languageEnglish (US)
Pages (from-to)12850-12865
Number of pages16
JournalOptics Express
Volume23
Issue number10
DOIs
StatePublished - 2015

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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