The physical effects that must be included in an accurate model of a silicon-controlled rectifier are discussed and compared with those for bipolar transistors. There are key differences in the modeling of the intrinsic silicon resistances and current gain for the two devices. Proper modeling of the underlying physics results in a compact model that is applicable over a wide range of current levels and is scalable.
- Compact modeling
- Electrostatic discharge (ESD)
- Silicon-controlled rectifier (SCR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering