Physical basis for CMOS SCR compact models

Robert Mertens, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

The physical effects that must be included in an accurate model of a silicon-controlled rectifier are discussed and compared with those for bipolar transistors. There are key differences in the modeling of the intrinsic silicon resistances and current gain for the two devices. Proper modeling of the underlying physics results in a compact model that is applicable over a wide range of current levels and is scalable.

Original languageEnglish (US)
Article number7365555
Pages (from-to)296-302
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number1
DOIs
StatePublished - Jan 1 2016

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Thyristors
Bipolar transistors
Silicon
Physics

Keywords

  • Compact modeling
  • Electrostatic discharge (ESD)
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Physical basis for CMOS SCR compact models. / Mertens, Robert; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 1, 7365555, 01.01.2016, p. 296-302.

Research output: Contribution to journalArticle

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