Photoresist-free deposition and patterning with vacuum ultraviolet lamps

A method for photoresist-free photolithography to pattern a surface of conductor or semiconductor substrate and deposit a material includes surface cleaning and irradiating a surface through a mask with VUV photons from a lamp. Photons are generated with a VUV lamp having a wavelength of 160 nm-200 nm and with an intensity sufficient to alter the surface. The photons are directed through a mask pattern to alter the surface chemistry or structure in those areas of the substrate defined by the mask. Material is selectively deposited onto the surface, in those portions of the surface that are exposed to the VUV photons, or unexposed to the VUV photons, depending on the substrate surface. A method uses a seed film and then electroplates metal onto the seed film in the mask pattern. A method provides for electroless deposition of metal and another for altering surface chemistry in the mask pattern.