Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma

Branden J. Bodner; Paul J. Froeter; Kuldeep Kalonia; R. Mohan Sankaran

doi:10.1116/6.0004147

Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma

Branden J. Bodner, Paul J. Froeter, Kuldeep Kalonia, R. Mohan Sankaran

Research output: Contribution to journal › Article › peer-review

Abstract

Photoresist ashing is one of the most common processing steps in semiconductor manufacturing. Conventional methods for photoresist ashing are wasteful, cause undesired damage, or lack the high throughput desired by industry. In this study, a large-area, atmospheric-pressure plasma source is studied for photoresist ashing. Etch rates of ∼200 nm/min are achieved using only argon and air, and no damage is introduced onto the underlying substrate. The ability to remove blanket and patterned photoresist films is demonstrated.

Original language	English (US)
Article number	012204
Journal	Journal of Vacuum Science and Technology B
Volume	43
Issue number	1
DOIs	https://doi.org/10.1116/6.0004147
State	Published - Jan 1 2025

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1116/6.0004147

Library availability

Discover UIUC Full Text

Cite this

@article{1cb5c54059824b9384576aacce69771b,

title = "Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma",

abstract = "Photoresist ashing is one of the most common processing steps in semiconductor manufacturing. Conventional methods for photoresist ashing are wasteful, cause undesired damage, or lack the high throughput desired by industry. In this study, a large-area, atmospheric-pressure plasma source is studied for photoresist ashing. Etch rates of ∼200 nm/min are achieved using only argon and air, and no damage is introduced onto the underlying substrate. The ability to remove blanket and patterned photoresist films is demonstrated.",

author = "Bodner, {Branden J.} and Froeter, {Paul J.} and Kuldeep Kalonia and {Mohan Sankaran}, R.",

note = "This work has been sponsored in part by Comet Plasma Control Technologies and reviewed by Alexandre de Chambrier. We thank Matthew Confer for assisting with FTIR spectroscopy.",

year = "2025",

month = jan,

day = "1",

doi = "10.1116/6.0004147",

language = "English (US)",

volume = "43",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma

AU - Bodner, Branden J.

AU - Froeter, Paul J.

AU - Kalonia, Kuldeep

AU - Mohan Sankaran, R.

N1 - This work has been sponsored in part by Comet Plasma Control Technologies and reviewed by Alexandre de Chambrier. We thank Matthew Confer for assisting with FTIR spectroscopy.

PY - 2025/1/1

Y1 - 2025/1/1

N2 - Photoresist ashing is one of the most common processing steps in semiconductor manufacturing. Conventional methods for photoresist ashing are wasteful, cause undesired damage, or lack the high throughput desired by industry. In this study, a large-area, atmospheric-pressure plasma source is studied for photoresist ashing. Etch rates of ∼200 nm/min are achieved using only argon and air, and no damage is introduced onto the underlying substrate. The ability to remove blanket and patterned photoresist films is demonstrated.

AB - Photoresist ashing is one of the most common processing steps in semiconductor manufacturing. Conventional methods for photoresist ashing are wasteful, cause undesired damage, or lack the high throughput desired by industry. In this study, a large-area, atmospheric-pressure plasma source is studied for photoresist ashing. Etch rates of ∼200 nm/min are achieved using only argon and air, and no damage is introduced onto the underlying substrate. The ability to remove blanket and patterned photoresist films is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=85215420872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85215420872&partnerID=8YFLogxK

U2 - 10.1116/6.0004147

DO - 10.1116/6.0004147

M3 - Article

AN - SCOPUS:85215420872

SN - 2166-2746

VL - 43

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 1

M1 - 012204

ER -

Photoresist ashing at room temperature using a large-area, atmospheric-pressure plasma

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this