Photonic crystal band edge diode light emitters

Christopher M. Long, Antonios V. Giannopoulos, Kent D Choquette

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report electrically injected photonic crystal band edge light emitting diodes. The InP-based membrane light emitters utilize a transverse junction that is created using selective ion implantation. Spectral properties showing the influence of the photonic crystal are reported.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages399-402
Number of pages4
DOIs
StatePublished - Oct 2 2009
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: May 10 2009May 14 2009

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period5/10/095/14/09

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Long, C. M., Giannopoulos, A. V., & Choquette, K. D. (2009). Photonic crystal band edge diode light emitters. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 399-402). [5012441] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012441