TY - JOUR
T1 - Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser
AU - James, A.
AU - Walter, G.
AU - Feng, M.
AU - Holonyak, N.
PY - 2007/4/24
Y1 - 2007/4/24
N2 - Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints IE+I B+IC=0 (α=ΔIC/ΔIE) and α → 1, breakdown and negative resistance effects in the IĆ-VCE characteristics. Collector bias, aided by photon-assisted tunneling (Franz - Keldysh absorption), supplies holes to the n-p-n transistor base by tunneling escape of electrons (ΔIB=0), "feeding" quantum-well recombination radiation (generation and regeneration, ΔIE=ΔIC=ΔIhv) and yielding the negative resistance/switching condition α → 1 (α=ΔIC/ΔIE, ΔIC =ΔIE, ΔIB=0, IE+I B+IC=0), and, as a consequence, corners, negative resistance, switching, vertical collector current (ΔVCE≈ 0), spectral change, and mode hopping effects in the IC-VCE characteristics.
AB - Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints IE+I B+IC=0 (α=ΔIC/ΔIE) and α → 1, breakdown and negative resistance effects in the IĆ-VCE characteristics. Collector bias, aided by photon-assisted tunneling (Franz - Keldysh absorption), supplies holes to the n-p-n transistor base by tunneling escape of electrons (ΔIB=0), "feeding" quantum-well recombination radiation (generation and regeneration, ΔIE=ΔIC=ΔIhv) and yielding the negative resistance/switching condition α → 1 (α=ΔIC/ΔIE, ΔIC =ΔIE, ΔIB=0, IE+I B+IC=0), and, as a consequence, corners, negative resistance, switching, vertical collector current (ΔVCE≈ 0), spectral change, and mode hopping effects in the IC-VCE characteristics.
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U2 - 10.1063/1.2721364
DO - 10.1063/1.2721364
M3 - Article
AN - SCOPUS:34247233272
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 152109
ER -