TY - JOUR
T1 - Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser
AU - James, A.
AU - Walter, G.
AU - Feng, M.
AU - Holonyak, N.
N1 - Funding Information:
The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). One of the authors (N.H., Jr.) wishes to acknowledge the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and the other author acknowledges (M.F.) the support of the Holonyak Chair of Electrical and Computer Engineering. The authors wish to thank K. Y. Cheng for his contributions to this project.
PY - 2007
Y1 - 2007
N2 - Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints IE+I B+IC=0 (α=ΔIC/ΔIE) and α → 1, breakdown and negative resistance effects in the IĆ-VCE characteristics. Collector bias, aided by photon-assisted tunneling (Franz - Keldysh absorption), supplies holes to the n-p-n transistor base by tunneling escape of electrons (ΔIB=0), "feeding" quantum-well recombination radiation (generation and regeneration, ΔIE=ΔIC=ΔIhv) and yielding the negative resistance/switching condition α → 1 (α=ΔIC/ΔIE, ΔIC =ΔIE, ΔIB=0, IE+I B+IC=0), and, as a consequence, corners, negative resistance, switching, vertical collector current (ΔVCE≈ 0), spectral change, and mode hopping effects in the IC-VCE characteristics.
AB - Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints IE+I B+IC=0 (α=ΔIC/ΔIE) and α → 1, breakdown and negative resistance effects in the IĆ-VCE characteristics. Collector bias, aided by photon-assisted tunneling (Franz - Keldysh absorption), supplies holes to the n-p-n transistor base by tunneling escape of electrons (ΔIB=0), "feeding" quantum-well recombination radiation (generation and regeneration, ΔIE=ΔIC=ΔIhv) and yielding the negative resistance/switching condition α → 1 (α=ΔIC/ΔIE, ΔIC =ΔIE, ΔIB=0, IE+I B+IC=0), and, as a consequence, corners, negative resistance, switching, vertical collector current (ΔVCE≈ 0), spectral change, and mode hopping effects in the IC-VCE characteristics.
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U2 - 10.1063/1.2721364
DO - 10.1063/1.2721364
M3 - Article
AN - SCOPUS:34247233272
SN - 0003-6951
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 15
M1 - 152109
ER -