Photoluminescence quenching spectroscopy of trap-mediated Er3+ excitation mechanisms in Er-implanted GaN

S. J. Rhee, S. Kim, X. Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

Two-source optical quenching spectroscopy demonstrates that the four site-selective Er3+ photoluminescence (PL) spectra observed in Er-implanted GaN contribute to the above-gap excited Er3+ PL spectrum, with relative efficiencies determined by the carrier capture cross sections and concentrations of the defects or traps which mediate the excitation of each Er site. The above-gap pumped PL spectrum is dominated by two of the trap-mediated Er3+ PL spectra, while the highest concentration Er site, which is efficiently pumped only by direct 4f absorption, contributes only weakly. These experiments indicate that the same defects and impurities are involved in the trap-mediated processes responsible for both the above- and the below-gap excitations of the Er3+ PL.

Original languageEnglish (US)
Pages (from-to)667-672
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 5 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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