Photoluminescence of wet- and dry-etched gallium nitride

E. E. Reuter, C. Youtsey, I. Adesida, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

The photoluminescence (PL) of GaN grown on SiC is studied as a function of etch depth for two types of etches, photoelectrochemical and chemically assisted ion beam. It is found that as the etch proceeds deeper toward the substrate, the PL exhibits an increasing blue-shift and an increase in emission intensity of the donor acceptor pair band, which indicates increasing biaxial compressive stress and increasing impurity concentration near the substrate. The PL spectra of the dry etched GaN tended to have slightly higher intensities than comparably wet etched GaN.

Original languageEnglish (US)
Pages (from-to)997-1002
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 5 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Reuter, E. E., Youtsey, C., Adesida, I., & Bishop, S. G. (1997). Photoluminescence of wet- and dry-etched gallium nitride. Materials Research Society Symposium - Proceedings, 482, 997-1002.