Photoluminescence observation of quantum confined stark effect caused by band bending near the surface of etched structures with GaAs/AlGaAs wells

V. N. Astratov, Yu A. Vlasov

Research output: Contribution to journalConference article

Abstract

The interaction of electronic and excitonic states confined in quantum wells (QW) with nearby sulphur-passivated surface was studied by photoluminescence (PL). The redshift (up to 12 meV for 50A QW) and quenching (down to 10-4) of QW PL line were observed with approaching of the surface closely to QW by wet etching. The predominant role of quantum-confined Stark effect (QCSE) caused by the near-surface band bending was revealed by the following observations: (1) long-range surface influence (>300A), (2) increasing of the redshift for the thicker QW's, (3) the redshift dependence on the excitation level. On the basis of QCSE theory all the parameters of depleted layer on excitation level are determined. The revealed model can be used for the explanation of the optical properties of etched nanostructures.

Original languageEnglish (US)
Pages (from-to)277-281
Number of pages5
JournalJournal De Physique. IV : JP
Volume3
Issue number5
DOIs
StatePublished - 1993
Externally publishedYes
EventProceedings of the Third International Conference on Optics of Excitons in Confined Systems - Montpellier, Fr
Duration: Aug 30 1993Sep 2 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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