The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ∼16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect. The presence of deep levels contributing to radiative recombination does not necessarily preclude the material from producing a high efficiency device and may suggest the absence of dominant non-radiative recombination pathways. The band edge width as measured by PLE and the separation of this edge from defect states are suggested to be potentially effective indicators of the quality of a material. Luminescence that appears to be connected with the absence of Na in the growth process persists in high Ga alloy, Na containing materials, suggesting that Na may become ineffective in passivating or eliminating certain defects in high Ga material.