Photoluminescence and photoluminescence excitation spectroscopy of Cu(In,Ga)Se2 thin films

Damon N. Hebert, Julio A.N.T. Soares, Angus A. Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ∼16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect. The presence of deep levels contributing to radiative recombination does not necessarily preclude the material from producing a high efficiency device and may suggest the absence of dominant non-radiative recombination pathways. The band edge width as measured by PLE and the separation of this edge from defect states are suggested to be potentially effective indicators of the quality of a material. Luminescence that appears to be connected with the absence of Na in the growth process persists in high Ga alloy, Na containing materials, suggesting that Na may become ineffective in passivating or eliminating certain defects in high Ga material.

Original languageEnglish (US)
Title of host publicationThin-Film Compound Semiconductor Photovoltaics - 2009
Pages93-100
Number of pages8
StatePublished - May 14 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1165
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/13/094/17/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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