Abstract
We report the photoluminescence (PL) and cathodoluminescence (CL) study of nanostructured poly-crystalline silicon surface fabricated by lithography-less, reactive ion etching process. Photoluminescence in visible range at room temperature with peak position between 630 nm and 720 nm is observed without any oxidation or annealing steps. X-ray photoemission (XPS) and Auger electron spectroscopy (AES) revealed the presence of silicon oxide. The observed cathodoluminescence in green and red regions of the visible spectrum are due to nano-scaled tips and their coating with nonstoichiometric silicon oxide.
Original language | English (US) |
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Article number | 151902 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 15 |
DOIs | |
State | Published - Oct 10 2011 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)