Photodetection with silicon pyramidal microdischarge devices

Nels P. Ostrom; J. Gary Eden

Photodetection with silicon pyramidal microdischarge devices

Nels P. Ostrom
, J. Gary Eden

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The performance of Si pyramidal microdischarge photodetectors were characterized in the visible and near-infrared with near-atmospheric Ne plasmas. The inverted pyramid cavities were wet etched into the silicon and were surrounded by a dielectric layer consisting of silicon nitride and polyimide, having a total thickness of ∼ 10 μm. The individual 100×100 μm ² and 50×50μm ² devices were tested in a vacuum chamber that was evacuated below 1×10 ^-6 Torr and backfilled with research grade Ne to a pressure of 500 and 800 Torr. The absolute spectral response of the microdischarge-based photodetectors was also investigated.

Original language	English (US)
Article number	MP5
Pages (from-to)	154-155
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2004
Event	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: Nov 7 2004 → Nov 11 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{52f3511734434864b8c369a4ef6e0a6c,

title = "Photodetection with silicon pyramidal microdischarge devices",

abstract = "The performance of Si pyramidal microdischarge photodetectors were characterized in the visible and near-infrared with near-atmospheric Ne plasmas. The inverted pyramid cavities were wet etched into the silicon and were surrounded by a dielectric layer consisting of silicon nitride and polyimide, having a total thickness of ∼ 10 μm. The individual 100×100 μm 2 and 50×50μm 2 devices were tested in a vacuum chamber that was evacuated below 1×10 -6 Torr and backfilled with research grade Ne to a pressure of 500 and 800 Torr. The absolute spectral response of the microdischarge-based photodetectors was also investigated.",

author = "Ostrom, \{Nels P.\} and \{Gary Eden\}, J.",

year = "2004",

language = "English (US)",

volume = "1",

pages = "154--155",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - Photodetection with silicon pyramidal microdischarge devices

AU - Ostrom, Nels P.

AU - Gary Eden, J.

PY - 2004

Y1 - 2004

N2 - The performance of Si pyramidal microdischarge photodetectors were characterized in the visible and near-infrared with near-atmospheric Ne plasmas. The inverted pyramid cavities were wet etched into the silicon and were surrounded by a dielectric layer consisting of silicon nitride and polyimide, having a total thickness of ∼ 10 μm. The individual 100×100 μm 2 and 50×50μm 2 devices were tested in a vacuum chamber that was evacuated below 1×10 -6 Torr and backfilled with research grade Ne to a pressure of 500 and 800 Torr. The absolute spectral response of the microdischarge-based photodetectors was also investigated.

AB - The performance of Si pyramidal microdischarge photodetectors were characterized in the visible and near-infrared with near-atmospheric Ne plasmas. The inverted pyramid cavities were wet etched into the silicon and were surrounded by a dielectric layer consisting of silicon nitride and polyimide, having a total thickness of ∼ 10 μm. The individual 100×100 μm 2 and 50×50μm 2 devices were tested in a vacuum chamber that was evacuated below 1×10 -6 Torr and backfilled with research grade Ne to a pressure of 500 and 800 Torr. The absolute spectral response of the microdischarge-based photodetectors was also investigated.

UR - https://www.scopus.com/pages/publications/14244263877

UR - https://www.scopus.com/pages/publications/14244263877#tab=citedBy

M3 - Conference article

AN - SCOPUS:14244263877

SN - 1092-8081

VL - 1

SP - 154

EP - 155

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

M1 - MP5

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

Photodetection with silicon pyramidal microdischarge devices

Abstract

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