Photodetection with silicon pyramidal microdischarge devices

Nels P. Ostrom, James Gary Eden

Research output: Contribution to journalConference article

Abstract

The performance of Si pyramidal microdischarge photodetectors were characterized in the visible and near-infrared with near-atmospheric Ne plasmas. The inverted pyramid cavities were wet etched into the silicon and were surrounded by a dielectric layer consisting of silicon nitride and polyimide, having a total thickness of ∼ 10 μm. The individual 100×100 μm 2 and 50×50μm 2 devices were tested in a vacuum chamber that was evacuated below 1×10 -6 Torr and backfilled with research grade Ne to a pressure of 500 and 800 Torr. The absolute spectral response of the microdischarge-based photodetectors was also investigated.

Original languageEnglish (US)
Article numberMP5
Pages (from-to)154-155
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 2004
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: Nov 7 2004Nov 11 2004

Fingerprint

Silicon
Photodetectors
Silicon nitride
Polyimides
Vacuum
Infrared radiation
Plasmas
silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Photodetection with silicon pyramidal microdischarge devices. / Ostrom, Nels P.; Eden, James Gary.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, MP5, 01.12.2004, p. 154-155.

Research output: Contribution to journalConference article

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