Photocurrent gain in graphene-silicon p-i-n junction

Tingyi Gu, Nick Petrone, Arend Van Der Zande, Yilei Li, Austin Cheng, Tony F. Heinz, Philip Kim, James Hone, Chee Wei Wong, Charles Santori, Raymond Beausoleil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate single atomic cladding layer of graphene enhance the photocurrent profile of the monolithic silicon p-i-n junction, by spatially- and spectrally- resolved photocurrent measurement.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

Fingerprint

p-i-n junctions
Graphite
Silicon
Photocurrents
Graphene
photocurrents
graphene
silicon
profiles

Keywords

  • Graphene
  • Hot carriers
  • Junctions
  • Logic gates
  • PIN photodiodes
  • Photoconductivity
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Gu, T., Petrone, N., Van Der Zande, A., Li, Y., Cheng, A., Heinz, T. F., ... Beausoleil, R. (2015). Photocurrent gain in graphene-silicon p-i-n junction. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7184429] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

Photocurrent gain in graphene-silicon p-i-n junction. / Gu, Tingyi; Petrone, Nick; Van Der Zande, Arend; Li, Yilei; Cheng, Austin; Heinz, Tony F.; Kim, Philip; Hone, James; Wong, Chee Wei; Santori, Charles; Beausoleil, Raymond.

2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7184429 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gu, T, Petrone, N, Van Der Zande, A, Li, Y, Cheng, A, Heinz, TF, Kim, P, Hone, J, Wong, CW, Santori, C & Beausoleil, R 2015, Photocurrent gain in graphene-silicon p-i-n junction. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7184429, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 5/10/15.
Gu T, Petrone N, Van Der Zande A, Li Y, Cheng A, Heinz TF et al. Photocurrent gain in graphene-silicon p-i-n junction. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7184429. (Conference on Lasers and Electro-Optics Europe - Technical Digest).
Gu, Tingyi ; Petrone, Nick ; Van Der Zande, Arend ; Li, Yilei ; Cheng, Austin ; Heinz, Tony F. ; Kim, Philip ; Hone, James ; Wong, Chee Wei ; Santori, Charles ; Beausoleil, Raymond. / Photocurrent gain in graphene-silicon p-i-n junction. 2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Conference on Lasers and Electro-Optics Europe - Technical Digest).
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