Photocurrent gain in graphene-silicon p-i-n junction

Tingyi Gu, Nick Petrone, Arend Van Der Zande, Yilei Li, Austin Cheng, Tony F. Heinz, Philip Kim, James Hone, Chee Wei Wong, Charles Santori, Raymond Beausoleil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate single atomic cladding layer of graphene enhance the photocurrent profile of the monolithic silicon p-i-n junction, by spatially- and spectrally- resolved photocurrent measurement.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

Keywords

  • Graphene
  • Hot carriers
  • Junctions
  • Logic gates
  • PIN photodiodes
  • Photoconductivity
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Gu, T., Petrone, N., Van Der Zande, A., Li, Y., Cheng, A., Heinz, T. F., Kim, P., Hone, J., Wong, C. W., Santori, C., & Beausoleil, R. (2015). Photocurrent gain in graphene-silicon p-i-n junction. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7184429] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..