Photocurrent gain in graphene-silicon p-i-n junction

Tingyi Gu, Nick Petrone, Arend Van der Zande, Yilei Li, Austin Cheng, Tony F. Heinz, Philip Kim, James Hone, Chee Wei Wong, Charles Santori, Raymond Beausoleil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate single atomic cladding layer of graphene enhance the photocurrent profile of the monolithic silicon p-i-n junction, by spatially- and spectrally- resolved photocurrent measurement.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO-SI 2015
PublisherOptical Society of America (OSA)
Number of pages1
ISBN (Electronic)9781557529688
DOIs
StatePublished - May 4 2015
Externally publishedYes
EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameCLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Gu, T., Petrone, N., Van der Zande, A., Li, Y., Cheng, A., Heinz, T. F., Kim, P., Hone, J., Wong, C. W., Santori, C., & Beausoleil, R. (2015). Photocurrent gain in graphene-silicon p-i-n junction. In CLEO: Science and Innovations, CLEO-SI 2015 (CLEO: Science and Innovations, CLEO-SI 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_SI.2015.SW4N.4